 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| ST 2SD965 NPN Silicon Epitaxial Planar Transistor for low-frequency power and stroboscope applications. The transistor is subdivided into three groups P, Q and R, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. Features Low collector-emitter saturation voltage Satisfactory operation performances at high efficiency with the low voltage power supply TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta=25oC) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Peak Collector Current Collector Current Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO ICP IC Ptot Tj TS Value 40 20 7 8 5 750 150 -55 to +150 Unit V V V A A mW O O C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 11/08/2003 ST 2SD965 Characteristics at Tamb=25 OC Symbol DC Current Gain at VCE=2V, IC=0.5A P Q R at VCE=2V, IC=1A Collector Cutoff Current at VCB=10V Collector Cutoff Current at VCE=10V Emitter Cutoff Current at VEB=7V Collector Output Capacitance at VCB=20V, f=1MHz (Common base, input open circuited) Collector to Emitter Voltage at IC=1mA Emitter to Base Voltage at IE=10A Collector to Emitter Saturation Voltage at IC=3A, IB=0.1A Current Gain Bandwidth Product at VCB=6V, IE= -50mA, f=200MHz fT 150 MHz VCE(sat) 0.28 1 V VEBO 7 V VCEO 20 V Cob 26 50 pF IEBO 0.1 A ICEO 1.0 A ICBO 0.1 A hFE hFE hFE hFE 120 230 340 150 250 380 600 Min. Typ. Max. Unit SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 11/08/2003 ST 2SD965 PC - Ta 1000 2.4 Ta=25 C I B=7mA 6mA I C - VCE 6 VCE=2V I C - VBE 800 2.0 5 Ta= 75 C 25 C 1.6 600 PC, mW I C, A 5mA 4 -25 C 400 0.8 3mA I C, A 1.2 4mA 3 2 2mA 200 0.4 1mA 1 0 0 40 80 Ta ( C) 120 160 0 0 0.4 0.8 1.2 VCE, V 1.6 2.0 2.4 0 0 0.4 0.8 1.2 1.6 2.0 VBE, V VCE(sat) - IC 10 IC/IB=30 VBE(sat) - IC 100 IC/IB=30 h FE - IC 600 VCE=2V Ta=25 C 500 1 10 400 VBE(sat), V VCE(sat), V Ta= 75 C 25 C Ta= -25 C 75 C 25 C Ta= 75 C 25 C -25 C h FE 0.1 1 300 200 0.01 0.1 100 -25 C 0.001 0.01 0.1 1 10 0.01 0.01 0.1 1 10 0 0.01 0.1 1 10 COLLECTOR CURRENT, A COLLECTOR CURRENT, A COLLECTOR CURRENT, A fT - I E 400 100 COLLECTOR OUTPUT CAPACITANCE, pF (COMMON BASE, INPUT OPEN CIRCUITED) Cob - VCB 100 I E=0 f=1MHz Ta=25 C VCB=6V Ta=25 C SAFE OPERATION AREA Single pulse Ta=25 C 80 300 10 I CP IC t=1s fT, MHz 60 IC, A t=10ms 200 1 40 0.1 20 100 0 -0.01 0 -0.1 -1 -10 1 10 VCB, V 100 0.01 0.1 1 VCE, V 10 100 I E, A SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 11/08/2003 |
Price & Availability of ST2SD965
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |